Toshiba Launches 3300V High-Power SiC MOSFET Module

Executive Briefing & Key Highlights

The dual SiC MOSFET module combines an 800 A drain-current rating with a 300 kA²s diode I²t rating for demanding power conversion systems. The post Toshiba Launches 3300V High-Power SiC MOSFET Module appeared first on Power Electronics News.