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Renesas 650V GaN Enables High-Density 800V AI Power
Power Electronics News30 September 2026

Renesas 650V GaN Enables High-Density 800V AI Power

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Executive Briefing & Key Highlights

The new device combines 20mΩ on-resistance with dual-side cooling for compact, high-density 800V power conversion. The post Renesas 650V GaN Enables High-Density 800V AI Power appeared first on Power Electronics News.

Topics:powerelectronicsEVWide BandgapMaterialsEV/PowerSemiconductor