New Doping Method Boosts Mobile Charges In Semiconductors

Executive Briefing & Key Highlights

Researchers developed degradation-assisted doping that generates up to 100 times more mobile charges, potentially improving flexible electronics, optoelectronics, and thermoelectric devices through higher conductivity performance. Researchers from the Institut national de la recherche scientifique (INRS), Concordia University, and York University have developed a degradation-assisted doping (DAD)